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RESEARCH PRODUCT
Radiation-induced defects in antiferroelectric thin films
Karl HumerR. BittnerAndris SternbergHarald W. WeberK. Kundzinssubject
Materials sciencebusiness.industryMechanical EngineeringBolometerDielectricRadiationRadiation effectPulsed laser depositionlaw.inventionNuclear magnetic resonanceNuclear Energy and EngineeringlawOptoelectronicsGeneral Materials ScienceIrradiationThin filmbusinessDeposition (law)Civil and Structural Engineeringdescription
Abstract Radiation effects on highly oriented antiferroelectric (AFE) PbZrO3 (PZ) films with a thickness of approximately 400 nm are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. The films were prepared by pulsed laser deposition (PLD). The dielectric constant was measured in the frequency range from 1 to 250 kHz in a stepwise cooling mode (∼2 °C min−1) from 400 °C to room temperature before and after irradiation to a fast neutron fluence of 2×1022 m−2 (E>0.1 MeV). After irradiation, the films were annealed in several steps up to ∼400 °C to remove the radiation-induced defects. The results are discussed in terms of two kinds of radiation effects, i.e. structural defects (oxygen vacancies) and radiation-induced charges, trapped at defect structures. The measurements show significant differences to sol–gel PZ thin films, which is mainly explained by the high quality of the PLD films.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-09-01 | Fusion Engineering and Design |