6533b7d7fe1ef96bd12678ef
RESEARCH PRODUCT
Structure and Doping Determined Thermoelectric Properties of Bi2Se3Thin Films Deposited by Vapour–Solid Technique
Donats ErtsMartins ZubkinsJana AndzaneK. BuksMikhael BechelanyMargarita BaitimirovaMikelis MarnauzaMalvine Nelda Strakovasubject
Fused quartzMaterials scienceDopantDopingAnalytical chemistry02 engineering and technology021001 nanoscience & nanotechnologyComputer Science Applicationslaw.inventionlawSeebeck coefficientThermoelectric effectDeposition (phase transition)Electrical and Electronic EngineeringThin film0210 nano-technologyMolecular beam epitaxydescription
In this work, a simple catalyst-free vapour-solid deposition method was applied for controlled deposition of two types (planar and disordered) of continuous Bi 2 Se 3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Characterisation of electron transport (type, concentration and mobility of the main charge carriers) and thermoelectric properties (Seebeck coefficient and power factor) showed that proposed in this work deposition method allows to obtain Bi 2 Se 3 thin films with power factor comparable and even higher than reported for the Bi 2 Se 3 thin films grown by molecular beam epitaxy technique. Power factor of the best obtained thin films can be significantly improved by introduction Sb or Fe dopants in low concentrations.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-01-01 | IEEE Transactions on Nanotechnology |