6533b7d7fe1ef96bd1267973
RESEARCH PRODUCT
Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction
F. Di QuartoSalvatore PiazzaCarmelo SunseriV.o. Aimiuwusubject
Materials scienceAdmittanceChemical physicsGeneral Chemical EngineeringSchottky barrierKineticsElectrochemistryElectrolyteRedoxAnodeAmorphous solidElectrode potentialdescription
In order to elucidate the influence of thickness and amorphous structure on the kinetics of electron exchange with redox couples in solution, a critical re-examination of the energetics at the amorphous anodic WO3 films (a-WO3)—electrolyte junction has been performed, based on a recent theory of amorphous semiconductor (a-SC) Schottky barrier. The admittance study of the barrier performed in a large interval of electrode potential at changing frequency and film thickness allowed the determination of the energy levels as well as the distribution of localized electronic states within the mobility gap of the films. The new energetic picture derived is able to explain some features of the kinetics of electron exchange with an Fe2+/3+ redox couple in 0.5 M H2SO4 solution previously reported.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1991-01-01 | Electrochimica Acta |