Search results for "Admittance"

Study of the multipactor phenomenon using a full-wave integral equation technique

2017

Abstract Multipactor effect is a well-known phenomenon of RF breakdown in satellite payloads which degrades components, generates undesirable harmonics, contributes to power dissipation and increases noise in communications. Traditionally, multipactor has been investigated with the aim of obtaining the so-called multipactor threshold voltage, or to present different multipaction detection methods. However, very little attention has been focused on analysing this phenomenon using a multimodal approach. The main goal of this work is to analyse the interaction between a multipactor current and a realistic microwave cavity by means of a rigorous and accurate formulation. For the first time to t…

Trap-limited mobility in space-charge limited current in organic layers

2009

Space-charge limited current transport in organic devices, relevant to the operation of a range of organic optoelectronic devices, is analyzed in the frequency domain. The classical multiple trapping picture with one transport state and one trap level is used as the basis for the descriptions. By varying the energetic and kinetic properties of the traps, we show that the admittance and the capacitance spectra are considerably modified depending on the interplay between the trap-limited mobility and the trap kinetics. We point out that capacitance steps at low-frequency, usually found in experiments, are observed only for slow traps. © 2008 Elsevier B.V. All rights reserved.

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

2005

An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for thin (D ox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor-electrolyte junction (a-SC/EI) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb 2 O 5 /El interface in a large range (10 Hz-10 kHz) of frequency and electrode potential values. A modelling of experimental EIS data at different potentials and in the frequency range of 0.1 Hz-100 kHz is presented based on the theory of amorphous semiconductor and compared with the results of the fitting of the admittance data…

On the use of the electromechanical impedance technique for the assessment of dental implant stability: Modeling and experimentation

2014

We propose the electromechanical impedance technique to monitor the stability of dental implants. The technique consists of bonding one wafer-type piezoelectric transducers to the implant system. When subjected to an electric field, the transducer induces structural excitations which, in turn, affect the transducer’s electrical admittance. The hypothesis is that the health of the bone surrounding the implant affects the sensor’s admittance. A three-dimensional finite element model of a transducer bonded to the abutment of a dental implant placed in a host bone site was created to simulate the progress of the tissue healing that occurs after surgery. The healing was modeled by changing the …

Characterization of Anodic Oxides on Titanium by Photocurrent and Differential Admittance Techniques

2010

Characterization of Anodic Oxides on Magnetron Sputtered Ta-Nb Alloys by Photocurrent Spectroscopy and Differential Admittance Measurements

2010

Efficient analysis of cubic junction of rectangular waveguides using admittance-matrix representation

2000

In the paper an efficient and accurate method, based on the multimode-admittance-matrix representation and the theory of cavities, is proposed for the analysis of a six-port ‘cubic’ junction composed of the orthogonal intersection of three rectangular waveguides. Very simple closed-form analytical expressions are explicitly detailed for all matrix elements of this basic key building block. More general waveguide multiport junctions, composed of a central cubic junction with arbitrarily shaped waveguide access ports, are also studied using a segmentation procedure. To validate the theory, numerical results are first discussed for a standard rectangular waveguide six-port cross junction. Fina…

On the repeatability of the EMI for the monitoring of bonded joints

2015

We study the feasibility and the repeatability of the electromechanical impedance (EMI) method for the health monitoring of lightweight bonded joints. The EMI technique exploits the coupling between the displacement field and the potential field of a piezoelectric material, by attaching or embedding a piezoelectric transducer to the structure to be monitored. The sensor is excited by an external voltage and the electrical admittance which is the ratio between the electric current and the applied voltage is measured as it depends on the mechanical coupling between the transducer and the host structure. Owing to this interaction, the admittance may represent a signature for the health of the …

S-domain modeling of conducting post in rectangular waveguides by the BI-RME method

2002

This paper describes the application of the Boundary Integral - Resonant Mode Expansion method to the modeling of a conducting post in a rectangular waveguide. The mathematical model of this structure is determined in a very short time, in the form of pole expansion of the Generalized Admittance Matrix in the s-domain. This model is very useful in the CAD of combline or interdigital filters.

The reflection coefficient of a flared microstrip line radiating in an infinite parallel-plate waveguide

1993

In this article the reflection coefficient of a tapered microstrip line radiating in an infinite parallel-plate conducting waveguide is calculated. The reflection coefficient at the feed line is evaluated by using the aperture admittance of the horn and the scattering matrix of the continuous taper. The theoretical behavior of the aperture admittance is shown and the reflection coefficient of a microstrip horn radiating in the parallel-plate region of a bootlace lens is measured in order to verify the model. © 1993 John Wiley & sons, Inc.