Search results for "Admittance"

showing 3 items of 33 documents

Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admitt…

2006

Abstract An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for passive films grown on Nb in alkaline solution and in a large range of thickness (~20nm ÷ ~250nm). A modelling of electronic density of state (DOS) has been carried out by fitting EIS spectra, at different potentials and in a range of frequencies (0.1 Hz ≤ f ≤100 kHz), and differential admittance (DA) data of a-Nb 2 O 5 /El interface. The fitting of EIS and DA curves was performed by using the theory of amorphous semiconductor Schottky barrier and a non-homogeneous DOS distribution.

Settore ING-IND/23 - Chimica Fisica ApplicataAdmittanceMaterials scienceSchottky barrierAnalytical chemistryDensity of statesElectrolyteSpectral linea-SC Schottky barrierAmorphous solidAnodeElectronic density
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Impact of transparent conductive oxide on the admittance of thin film solar cells

2010

Abstract The impact of transparent electrically conducting oxide (TCO) on the admittance measurements of thin film p–i–n a-Si:H solar cells was investigated. Admittance measurements on solar cell devices, with different area and geometry, in a wide range of frequencies and biases were performed. The admittance measurements of the investigated solar cells, which use the TCO as an electrical contact, showed that the high frequency admittance per area unit depends on the area. This effect increases both with the probe frequency and the size of the solar cells. Transmission line model valid for strip geometry which explains how the resistivity of the TCO layer impacts the measured admittance of…

Theory of solar cellsMaterials scienceAdmittanceintegumentary systemEquivalent series resistancebusiness.industryCondensed Matter PhysicsCapacitanceElectronic Optical and Magnetic Materialslaw.inventionTransparent conductive oxide (TCO)Admittance CV measurementTransmission linesThin film solar cellsa-Si:H Series resistanceOpticslawParasitic elementSolar cellMaterials ChemistryElectrical and Electronic EngineeringThin filmbusinessTransparent conducting filmSolid-State Electronics
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Modelling the Electromechanical Impedance Method for the Prediction of the Biomechanical Behavior of Dental Implant Stability

2015

Abstract We propose the electromechanical impedance (EMI) technique to assess the stability of dental implants. The technique consists of bonding a piezoelectric transducer to the element to be monitored. Conventionally, electromechanical admittance is used to diagnose structural damage. In this study, we created a 3D finite element model to mimic a transducer bonded to the abutment of a dental implant placed in a host bone site. We simulated the healing after surgery by changing the Young's modulus of the bone-implant interface. The results show that as the Young's modulus of the interface increases, the electromechanical characteristic of the transducer changes.

non-destructive examination.AdmittanceMaterials sciencemedicine.medical_treatmentfinite element methodModulusosseointegrationGeneral Medicinenon-destructive examinationPiezoelectricityFinite element methodTransducerEngineering (all)EMImedicinedental stabilityelectromechanical impedance methodDental implantAbutment (dentistry)Engineering(all)Biomedical engineering
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