6533b839fe1ef96bd12a64e2

RESEARCH PRODUCT

Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admittance behaviour of anodic a-Nb2O5

Monica SantamariaF. Di QuartoF. P. La Mantia

subject

Settore ING-IND/23 - Chimica Fisica ApplicataAdmittanceMaterials scienceSchottky barrierAnalytical chemistryDensity of statesElectrolyteSpectral linea-SC Schottky barrierAmorphous solidAnodeElectronic density

description

Abstract An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for passive films grown on Nb in alkaline solution and in a large range of thickness (~20nm ÷ ~250nm). A modelling of electronic density of state (DOS) has been carried out by fitting EIS spectra, at different potentials and in a range of frequencies (0.1 Hz ≤ f ≤100 kHz), and differential admittance (DA) data of a-Nb 2 O 5 /El interface. The fitting of EIS and DA curves was performed by using the theory of amorphous semiconductor Schottky barrier and a non-homogeneous DOS distribution.

yearjournalcountryeditionlanguage
2006-01-01
https://doi.org/10.1016/b978-044452224-5/50055-x