6533b7d8fe1ef96bd126ad37
RESEARCH PRODUCT
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
Patrick PeretzkiMichael SeibtRobert ZieroldCarmen VoigtAndy ThomasSavio FabrettiCarsten RonningKornelius Nielschsubject
Materials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsMagnetoresistanceBiasing02 engineering and technologySputter deposition021001 nanoscience & nanotechnology01 natural sciencesAmorphous solidTunnel magnetoresistanceAtomic layer depositionTunnel effect0103 physical sciences010306 general physics0210 nano-technologyQuantum tunnellingdescription
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-09-29 |