0000000000263558
AUTHOR
Kornelius Nielsch
Superconductivity with broken time-reversal symmetry inside a superconducting s-wave state
In general, magnetism and superconductivity are antagonistic to each other. However, there are several families of superconductors, in which superconductivity may coexist with magnetism, and only a few examples are known, when superconductivity itself induces spontaneous magnetism. The most known compounds are Sr$_2$RuO$_4$ and some noncentrosymmetric superconductors. Here, we report the finding of a narrow dome of a novel $s+is'$ superconducting (SC) phase with broken time-reversal symmetry (BTRS) inside the broad $s$-wave SC region of the centrosymmetric multiband superconductor Ba$_{\rm 1-x}$K$_{\rm x}$Fe$_2$As$_2$ ($0.7 \lesssim x \lesssim 0.85$). We observe spontaneous magnetic fields …
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…
Fabrication of Chemically Tunable, Hierarchically Branched Polymeric Nanostructures by Multi-branched Anodic Aluminum Oxide Templates
In this paper, a template-assisted replication method is demonstrated for the fabrication of hierarchically branched polymeric nanostructures composed of post-modifiable poly(pentafluorophenyl acrylate). Anodic aluminum oxide templates with various shapes of hierarchically branched pores are fabricated by an asymmetric two-step anodization process. The hierarchical polymeric nanostructures are obtained by infiltration of pentafluorophenyl acrylate with a cross-linker and photoinitiator, followed by polymerization and selective removal of the template. Furthermore, the nanostructures containing reactive pentafluorophenyl ester are modified with spiropyran amine via post-polymerization modifi…