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RESEARCH PRODUCT
High-Frequency Experimental Characterization and Modeling of Six Pack IGBTs Power Modules
Giovanni TineAntonella RagusaDario Di CaraA. PecoraroAntonio CataliottiGiuseppe Marsalasubject
ImaginationEngineeringmedia_common.quotation_subjectCapacitive sensing02 engineering and technology01 natural sciencesCapacitanceElectromagnetic compatibility (EMC)power conversion0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringElectrical and Electronic EngineeringMATLABElectrical impedancemedia_commoncomputer.programming_language010302 applied physicsCouplingpower semiconductor switchepower semiconductor switchesbusiness.industry020208 electrical & electronic engineeringBipolar junction transistormodelingComputer Science Applications1707 Computer Vision and Pattern Recognitionpower module (PM)electromagnetic couplingControl and Systems EngineeringPower modulebusinessSettore ING-INF/07 - Misure Elettriche E Elettronichecomputerdescription
In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) power module (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTs PM has been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted disturbances, generated by the PM and measured in the dc link, have been compared with the simulation results verifying the proposed model.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-11-01 | IEEE Transactions on Industrial Electronics |