6533b7d9fe1ef96bd126cc4c
RESEARCH PRODUCT
Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
Ilari MaasiltaSaumyadip Chaudhurisubject
Materials sciencePhysics and Astronomy (miscellaneous)FOS: Physical sciences02 engineering and technologyType (model theory)01 natural sciencesSuperconductivity (cond-mat.supr-con)chemistry.chemical_compoundTantalum nitrideCondensed Matter::Superconductivity0103 physical sciencestan filmsMetal insulator010306 general physicsQuantum tunnellingSuperconductivityCondensed Matter::Quantum Gasesta114Condensed matter physicsCondensed Matter - Superconductivityjäähdytystransition021001 nanoscience & nanotechnologyjosephson-junctionslogic applicationschemistrytemperaturesSuperconducting transition temperature0210 nano-technologydescription
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-03-14 |