Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performe…

Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition

We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standard $ \theta -2 \theta $ and glancing angle X-ray diffraction techniques. For films grown on MgO a fa…

Impact of non-idealities on the conductance characteristics of superconductor-insulator-normal metal-insulator-superconductor tunnel junctions

We have investigated the effect of asymmetry in tunnelling resistance of individual normal metal-insulator-superconductor (NIS) tunnel junctions that constitute a SINIS pair, both experimentally and theoretically. Ours results clearly demonstrate that any finite asymmetry in the tunnelling resistance gives rise to an excess current, as compared to its symmetric counterpart, both below and around the gap edge. The signature of this excess current is visible almost up to the critical temperature. We find that this apparent broadening of the density of states is purely electrical in origin. Our calculations also show that any finite resistance that is in series with the tunnelling resistance, …

Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …

Nanosecond voltage pulses from dendritic flux avalanches in superconducting NbN films

Combined voltage and magneto-optical study of magnetic flux flow in superconducting NbN films is reported. The nanosecond-scale voltage pulses appearing during thermomagnetic avalanches have been recorded in films partially coated by a metal layer. Simultaneous magneto-optical imaging and voltage measurements allowed the pulses to be associated with individual flux branches penetrating the superconductor below the metal coating. From detailed characteristics of pulse and flux branches, the electrical field in the superconductor is found to be in the range of 5-50 kV/m, while the propagation speed of the avalanche during its final stage is found to be close to 5 km/s. peerReviewed

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

High-quality superconducting titanium nitride thin film growth using infra-red pulsed laser deposition

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ~17 μΩ cm and residual resist…

Engineering thermal conductance using a two-dimensional phononic crystal

Controlling thermal transport has become relevant in recent years. Traditionally, this control has been achieved by tuning the scattering of phonons by including various types of scattering centres in the material (nanoparticles, impurities, etc). Here we take another approach and demonstrate that one can also use coherent band structure effects to control phonon thermal conductance, with the help of periodically nanostructured phononic crystals. We perform the experiments at low temperatures below 1 K, which not only leads to negligible bulk phonon scattering, but also increases the wavelength of the dominant thermal phonons by more than two orders of magnitude compared to room temperature…

Normal-Metal–Insulator–Superconductor Tunnel Junction With Atomic-Layer-Deposited Titanium Nitride as Superconductor

Ray optics behavior of flux avalanche propagation in superconducting films

Experimental evidence of wave properties of dendritic flux avalanches in superconducting films is reported. Using magneto-optical imaging the propagation of dendrites across boundaries between a bare NbN film and areas coated by a Cu layer was visualized, and it was found that the propagation is refracted in full quantitative agreement with Snell’s law. For the studied film of 170 nm thickness and a 0.9 μm thick metal layer, the refractive index was close to n = 1.4. The origin of the refraction is believed to be caused by the dendrites propagating as an electromagnetic shock wave, similar to damped modes considered previously for normal metals. The analogy is justified by the large dissipa…