6533b827fe1ef96bd128708f
RESEARCH PRODUCT
Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
Timo SajavaaraMikko LaitinenJuhani JulinSaumyadip ChaudhuriIlari Maasiltasubject
Materials scienceAnnealing (metallurgy)General Physics and Astronomychemistry.chemical_element02 engineering and technologyManganese01 natural sciencesAluminiumElectrical resistivity and conductivitysuperconducting tunnel junctions0103 physical sciences010306 general physicsQuantum tunnellingSuperconductivityta114Condensed matter physicsDopingMetallurgy021001 nanoscience & nanotechnologylcsh:QC1-999Amorphous solidtunnel junctionschemistrysuperconducting metals0210 nano-technologylcsh:Physicsdescription
In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-12-01 | AIP Advances |