6533b7dafe1ef96bd126e1fe
RESEARCH PRODUCT
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
Raphaël ButtéJ.-f. CarlinH.-j. BühlmannA. CastigliaMauro MoscaE. FeltinT. ZhuNicolas GrandjeanD. Simeonovsubject
PhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)business.industryBOXESSettore ING-INF/01 - ElettronicaSemiconductor laser theoryGANOptical pumpingMICROCAVITIESLaser linewidthOpticsLASERSSemiconductors Laser physics Photoluminescence spectroscopy Oscillator strengths Quantum wells Optical absorption Whispering gallery wave Nitrides Etching Electrical properties and parametersOptoelectronicsStimulated emissionWhispering-gallery waveGAAS MICRODISKSbusinessLasing thresholdQuantum welldescription
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
year | journal | country | edition | language |
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2007-02-05 |