6533b7dbfe1ef96bd1271599
RESEARCH PRODUCT
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
Nicola DonatoE.f. CalandraGiovanni CrupiAlina Caddemisubject
Materials scienceMicrowave Characterization Small Signal Modeling Low-Noise Devices Cryogenic Temperatures Cold FET.Scatteringbusiness.industryExtraction (chemistry)CryogenicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSignalGallium arsenidechemistry.chemical_compoundchemistryScattering parametersEquivalent circuitOptoelectronicsbusinessMicrowavedescription
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-11-12 |