6533b7dcfe1ef96bd1273317

RESEARCH PRODUCT

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

Gerd SchönhenseLud V{e}k FrankFilip MikaIlona MüllerováMiloš HovorkaD. Valdaitsev

subject

Conventional transmission electron microscopeMicroscopeMaterials sciencebusiness.industryMechanical Engineeringtechnology industry and agricultureLow-voltage electron microscopeCondensed Matter Physicslaw.inventionOpticsMechanics of MaterialslawScanning transmission electron microscopyOptoelectronicsGeneral Materials ScienceElectron beam-induced depositionElectron microscopeHigh-resolution transmission electron microscopybusinessEnvironmental scanning electron microscope

description

Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism.

yearjournalcountryeditionlanguage
2007-01-01MATERIALS TRANSACTIONS
https://doi.org/10.2320/matertrans.48.936