6533b7dcfe1ef96bd127337f

RESEARCH PRODUCT

Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires

Arunas RamanaviciusMatthieu WeberIgor IatsunskyiPhilippe MieleOctavio GranielKarol ZałęskiSebastien BalmeMikhael BechelanyStefan JurgaGrzegorz NowaczykViktoriia FedorenkoRoman ViterRoman ViterValentyn Smyntyna

subject

PhotoluminescenceMaterials scienceNanowire02 engineering and technology010402 general chemistry01 natural sciencesSilicon nanowires (SiNWs)symbols.namesakeAtomic layer depositionnanosphere lithography (NSL)metal-assisted chemical etching (MACE)atomic layer deposition (ALD)[CHIM]Chemical SciencesGeneral Materials ScienceSpectroscopyWurtzite crystal structurebusiness.industryMechanical Engineering021001 nanoscience & nanotechnologyCondensed Matter PhysicsIsotropic etching0104 chemical sciencesMechanics of Materialssymbols:NATURAL SCIENCES [Research Subject Categories]ZnONanosphere lithographyOptoelectronics0210 nano-technologyRaman spectroscopybusiness

description

International audience; In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.

yearjournalcountryeditionlanguage
2018-10-01
10.1016/j.mseb.2018.11.007https://dspace.lu.lv/dspace/handle/7/50047