6533b7ddfe1ef96bd127408e
RESEARCH PRODUCT
Generation of defects in amorphous SiO(2) assisted by two-step absorption on impurity sites.
Roberto BoscainoFabrizio MessinaMarco Cannassubject
In situAbsorption spectroscopyChemistryDangling bondAnalytical chemistryPhysics::OpticsPhoton energyRadiationCondensed Matter PhysicsMolecular physicsSilica defects two-step absorptionAmorphous solidImpurityGeneral Materials ScienceAbsorption (electromagnetic radiation)description
Generation of the Si dangling bond defect in amorphous SiO(2) (E' centre) induced by tunable pulsed UV laser radiation was investigated by in situ optical absorption measurements. The defect generation efficiency peaks when the photon energy equals ∼5.1 eV, it depends quadratically on laser intensity and is correlated with the native linear absorption due to Ge impurities. We propose a model in which the generation of E' is assisted by a two-step absorption process occurring on Ge impurity sites.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-06-23 | Journal of physics. Condensed matter : an Institute of Physics journal |