6533b7defe1ef96bd1275c61
RESEARCH PRODUCT
The growth of atomically rough 4He crystals
Paul LeidererJoachim BodensohnKlaus Nicolaisubject
PhysicsCondensed matter physicsBand gapCondensed Matter::OtherThermodynamicsAbsolute valueCrystal growthCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsSuperfluidityHelium-4Phase (matter)General Materials Scienceddc:530AnisotropyBar (unit)description
We have studied the growth of atomically rough bcc and hcp4He crystals from the superfluid phase for temperaturesT>0.9 K. The growth coefficient displays a temperature dependence which can be represented bym 4 K∝ $$e^{\Delta E/k_B T} $$ . The parameter ΔE is found to be in close agreement with the energy gap of rotons, suggesting that these thermal excitations dominate the growth kinetics. Besides, the absolute value of the growth coefficient depends on crystal orientation, with an anisotropy for the hcp phase of about a factor of 2.5 between the $$\left\{ {10\bar 10} \right\}$$ and {0001} planes.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1986-03-01 |