6533b81ffe1ef96bd1277415
RESEARCH PRODUCT
Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactants
Mikko RitalaEsa PuukilainenJani HämäläinenMarkku LeskeläTimo Sajavaarasubject
OzoneInorganic chemistrychemistry.chemical_element02 engineering and technologyengineering.material010402 general chemistry01 natural sciencesRhodiumAtomic layer depositionchemistry.chemical_compoundImpurityMaterials ChemistryThin filmta116ta114Metals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryengineeringNoble metal0210 nano-technologyPlatinumPalladiumdescription
Abstract Atomic layer deposition (ALD) of noble metals by thermal processes has relied mostly on the use of molecular oxygen as a reactant at temperatures of 200 °C and above. In this study, the concept of using consecutive ozone and molecular hydrogen pulses with noble metal precursors in ALD is introduced for palladium, rhodium, and platinum metals. This approach facilitates the growth of noble metal thin films below 200 °C. Also the ALD of palladium oxide thin films is demonstrated by the ozone-based chemistry. The growth rates, resistivities, crystallinities, surface roughnesses, impurity contents, and adhesion of the films to the underlying Al 2 O 3 starting surface are reported and the results are compared with the most common noble metal ALD processes.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-03-01 | Thin Solid Films |