6533b81ffe1ef96bd12785c7
RESEARCH PRODUCT
Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures
Jouni AhopeltoMika PrunnilaPäivi TörmäP. KivinenAlexander Savinsubject
PhononphononsGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyElectronsemiconductors01 natural sciences0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsPhysicsElastic scatteringRange (particle radiation)Condensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsScatteringbusiness.industryRelaxation (NMR)Disordered Systems and Neural Networks (cond-mat.dis-nn)Condensed Matter - Disordered Systems and Neural Networks021001 nanoscience & nanotechnologySemiconductorelectron-phonon interactionsElectron temperature0210 nano-technologybusinesslow temperaturesdescription
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-01-01 | Physical Review Letters |