6533b81ffe1ef96bd12786b5
RESEARCH PRODUCT
Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects
G. OriglioMarco Cannassubject
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]Materials sciencePhotoluminescenceHydrogenbusiness.industryPhotodissociationCenter (category theory)chemistry.chemical_elementGermanium02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsCrystallographychemistryChemical bond0103 physical sciencesOptoelectronicsPACS number(s): 71.55.Jv 78.55.Qr 82.50.Hp 61.82.MsAbsorption (logic)010306 general physics0210 nano-technologybusinessLuminescencedescription
We studied the effects induced by the ultraviolet-laser and -lamp exposure sequences on the twofold coordinated germanium (=Ge{sup {center_dot}}{sup {center_dot}}) and the H(II) center (=Ge{sup {center_dot}}-H) in silica. The H(II) centers, generated after the first laser irradiation stage by the trapping of atomic hydrogen H{sup 0} at the (=Ge{sup {center_dot}}{sup {center_dot}}), are destroyed by the subsequent lamp exposure with efficiency depending on photon energy. The H(II) photodestruction is activated from {approx}4 eV, and its cross section is here quantitatively measured, so giving the absorption profile of this center. Consistent with the observed correlated recovering of (=Ge{sup {center_dot}}{sup {center_dot}}), the photodestruction is mainly due to the photolysis of the Ge-H bond leading to hydrogen detrapping.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-06-07 | Physical Review B |