6533b81ffe1ef96bd1278703
RESEARCH PRODUCT
External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals
Bernardo SpagnoloDominique Persano AdornoNicola PizzolatoDavide Valentisubject
PhysicsCondensed matter physicsbusiness.industryMonte Carlo methodQuantum noiseShot noiseSpectral densityStatistical and Nonlinear PhysicsNoise (electronics)Semiconductortransport propertiesElectric fieldfluctuations and noise processeDiffusion (business)businessMonte Carlo simulationMathematical Physicsdescription
We study the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples by using a Monte Carlo approach. The system is driven by an external periodic electric field in the presence of a random telegraph noise source. The modifications caused by the addition of external fluctuations are investigated by studying the spectral density of the electron velocity fluctuations for different values of the noise parameters. The findings indicate that the diffusion noise in low-doped semiconductors can be reduced by the addition of a fluctuating component to the driving electric field, but the effect critically depends on the features of the external noise source.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-10-01 | Reports on Mathematical Physics |