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RESEARCH PRODUCT
Ordering effects in extreme high-resolution depth profiling with MeV ion beams
Harry J. WhitlowSachiko T. Nakagawasubject
Nuclear and High Energy PhysicsMaterials scienceIon beamta114business.industryScatteringRutherford backscattering spectrometryRadial distribution functionMolecular physicsIonElastic recoil detectionMolecular dynamicsOpticsbusinessInstrumentationAtomic spacingdescription
Abstract The continuing development of depth profiling with MeV ion beam methods with depth resolutions in the nanometre, and even sub-nanometre, regime implies the resolved depth become comparable with the interatomic spacing. To investigate how short-range ordering influences depth profiles at these resolutions, we have employed a mathematical modelling approach. The radial, g ( r ) and depth distribution, g ( z ) functions were calculated for (1 0 0) surface, random and amorphous Si structures at 300 K produced using molecular dynamics simulations with the EDIP quasi-empirical potential. The results showed that short-range ordering lead to reduction of the scattering yield below the deep asymptotic level within about half a interatomic distance which will give a perturbation of the scattering yield for Rutherford Backscattering Spectrometry (RBS) and glancing incidence Elastic Recoil Detection Analysis (ERDA) geometries.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-02-01 | Nuclear Instruments and Methods in Physics Research B |