6533b821fe1ef96bd127ac7d
RESEARCH PRODUCT
Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
O. TsvetkovaL. KostykV. VasyltsivAnatoli I. PopovAndriy Luchechkosubject
010302 applied physicsNuclear and High Energy PhysicsMaterials sciencePhotoconductivityDopingAnalytical chemistryX-ray02 engineering and technologyActivation energy021001 nanoscience & nanotechnology01 natural sciencesIon0103 physical sciencesIrradiation0210 nano-technologyLuminescenceInstrumentationSingle crystaldescription
Abstract The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-02-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |