6533b821fe1ef96bd127accb

RESEARCH PRODUCT

Epitaxy and magnetotransport ofSr2FeMoO6thin films

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description

By pulsed-laser deposition epitaxial thin films of ${\mathrm{Sr}}_{2}{\mathrm{FeMoO}}_{6}$ have been prepared on (100) ${\mathrm{SrTiO}}_{3}$ substrates. Already for a deposition temperature of 320 \ifmmode^\circ\else\textdegree\fi{}C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the FeMo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to $4{\ensuremath{\mu}}_{B}$ per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found at 300 K an ordinary Hall coefficient of $\ensuremath{-}6.01\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}10} {\mathrm{m}}^{3}/\mathrm{As},$ corresponding to an electronlike charge-carrier density of 1.3 per FeMo pair. In the semiconducting films the magnetic moment is reduced to $1{\ensuremath{\mu}}_{B}/\mathrm{f}.\mathrm{u}.$ due to disorder in the FeMo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which nearly vanishes at low temperatures for the metallic films only.