6533b821fe1ef96bd127b08b
RESEARCH PRODUCT
TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs
A. CaddemiM. SanninoG. Mogaverosubject
Materials sciencemicrowaveSeries (mathematics)business.industryApplied MathematicsTransistorHigh-electron-mobility transistorFixtureNoise (electronics)noise modelsComputer Science Applicationslaw.inventiontemperature-dependentComputational Theory and MathematicsHEMT; noise models; microwave; temperature-dependentlawRange (statistics)Scattering parametersElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessHEMTdescription
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1994-04-01 | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |