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RESEARCH PRODUCT
High-Temperature Hall Measurements on BaSnO3Ceramics
Maximilian FleischerHans MeixnerBernhard Ostricksubject
Electron mobilityCondensed matter physicsThermal Hall effectchemistry.chemical_elementPartial pressureConductivityCondensed Matter::Mesoscopic Systems and Quantum Hall EffectOxygenAcceptorCondensed Matter::Materials SciencechemistryElectrical resistivity and conductivityHall effectMaterials ChemistryCeramics and Compositesdescription
Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO3ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-01-20 | Journal of the American Ceramic Society |