6533b823fe1ef96bd127e011

RESEARCH PRODUCT

Interface Effects in Ferroelectric Thin Films

R. KullmerG. LibertsMiguel AlgueróM. TyuninaLorena PardoVismants ZaulsMarija KosecDieter BäuerleM. KundzinshAndris SternbergL. Calzada

subject

Materials sciencePiezoelectric coefficientbusiness.industryDielectricLead zirconate titanatePiezoelectricityFerroelectricityTitanateZirconatechemistry.chemical_compoundchemistryOptoelectronicsLead titanatebusiness

description

Dielectric, ferroelectric and piezoelectric characteristics in sol-gel derived and pulsed laser deposited (PLD) lead zirconate titanate (PZT), La modified lead titanate (PLT) and zirconate titanate (PLZT) ferroelectric thin films are investigated focusing on maintenance of thin film ferroelectric (FE) properties in a variety of thin film-electrodesubstrate interfaces. Interferometric studies of piezoelectric response of the heterostructures were performed with respect to a DC electrical bias and AC measurement frequency. The asymmetry of piezoelectric coefficient (d33) hysteresis, diminished values of d33, frequency-displacement and spot size — deformation behaviour in the ferroelectric heterostructures were attributed to residual stress at the film-substrate interfaces and unrelaxed strain, characteristic in highly oriented FE thin films. Sol-gel derived PLT-8 and PLT-20 samples demonstrate relatively large displacement vs. electric field d33 values exceeding 80–100 pm/V at 1 kHz increasing with the decrease in the measurement frequency.

yearjournalcountryeditionlanguage
1998-01-01
https://doi.org/10.1007/978-94-017-1917-9_39