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RESEARCH PRODUCT

Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing

Juhani JulinP. J. KoppinenIlari Maasilta

subject

Materials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsPhysics and Astronomy (miscellaneous)Condensed matter physicsAnnealing (metallurgy)Ultra-high vacuumchemistry.chemical_elementFOS: Physical sciences02 engineering and technologyTrappingLow frequency021001 nanoscience & nanotechnology01 natural scienceschemistryAluminiumCondensed Matter::Superconductivity0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Vacuum chamber010306 general physics0210 nano-technologyQuantum tunnellingOrder of magnitude

description

We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated samples demonstrated a significant reduction in the 1/f noise level. Temperature dependence of the noise was studied between 4.2 and 340 Kelvin, with a linear dependence below 100 K, but a faster increase above. The results are consistent with a model where the density of charge trapping two level-systems within the tunneling barrier is reduced by the annealing process.

yearjournalcountryeditionlanguage
2010-06-16
https://dx.doi.org/10.48550/arxiv.1006.3162