6533b824fe1ef96bd12808f5
RESEARCH PRODUCT
Structural and in depth characterization of newly designed conducting/insulating TiN O /TiO2 multilayers obtained by one step LP-MOCVD growth
F. FabreguetteP. SibillotMario MaglioneLuc ImhoffOlivier HeintzM.c. Marco De LucasM. SacilottiBruno DomenichiniSylvie Bourgeoissubject
PermittivityMaterials sciencebusiness.industryAnalytical chemistryGeneral Physics and AstronomySurfaces and InterfacesGeneral ChemistryDielectricCondensed Matter PhysicsSurfaces Coatings and FilmsSecondary ion mass spectrometrychemistry.chemical_compoundchemistryMicroelectronicsOptoelectronicsElectrical measurementsMetalorganic vapour phase epitaxyThin filmTitanium isopropoxidebusinessdescription
Abstract TiNxOy/TiO2 multilayers have been grown by LP-MOCVD using titanium isopropoxide (TIP) precursor during the whole growth, but with an ammonia flow interrupted for the TiO2 layers. The one step growth process used to grow these structures allowed to stack the conducting and insulating layers without any growth breakdown. SIMS and TEM analyses showed the presence of an alternated insulating/conducting layers structure. Moreover, electrical measurements allowed to measure the dielectric part of insulating TiO2 stacked in these structures, whose permittivity was found to be about 80 for a MOS structure. Thus, such multilayers may lead to very promising applications in the microelectronics field.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-05-01 | Applied Surface Science |