6533b824fe1ef96bd1280b30

RESEARCH PRODUCT

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni1+xTe1 embedded nanodomains

Ch. B. LioutasEleni SarakinouEnrico MugnaioliUte KolbS NikolopoulosNikolaos VouroutzisNikolaos Frangis

subject

Materials scienceReflection high-energy electron diffractionGas electron diffractionbusiness.industryPhysics::OpticsCondensed Matter PhysicsMolecular physicsElectronic Optical and Magnetic MaterialsDiffraction tomographyCondensed Matter::Materials ScienceOpticsElectron diffractionMaterials ChemistryPrecession electron diffractionElectrical and Electronic EngineeringSelected area diffractionbusinessPowder diffractionElectron backscatter diffraction

description

Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni1+xTe1 embedded nanodomains and ion-thinned specimens of 6H–SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods.

10.1088/0268-1242/27/10/105003http://hdl.handle.net/11568/1131488