6533b824fe1ef96bd128130b
RESEARCH PRODUCT
Band Gap and Electronic Structure of an Epitaxial, SemiconductingCr0.80Al0.20Thin Film
Frances HellmanFrances HellmanB. BalkeB. BalkeCharles S. FadleyCharles S. FadleyChristian PappChristian PappAlexander X. GrayAlexander X. GrayShigenori UedaKeisuke KobayashiDerek StewartZoe BoekelheideZoe Boekelheidesubject
EngineeringBeamlineInfrastructure networkbusiness.industryBand gapGeneral Physics and AstronomyNanotechnologyElectronic structureThin filmEpitaxybusinessdescription
This work was supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 and the Nanotechnology Network Project, MEXT, Japan. C. Papp and B. Balke thank the Humboldt foundation for support. Calculations were done at the Cornell Nanoscale Facility, part of the National Nanotechnology Infrastructure Network (NNIN) funded by NSF. HXPS experiments were approved at the NIMS Beamline Station (Proposal No. 2009A4906)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2010-12-03 | Physical Review Letters |