6533b824fe1ef96bd1281322
RESEARCH PRODUCT
Gaussian quantum dots of type II in in-plane electric field
J. KrasnyjWitold JacakW. DonderowiczA ChuchmałaM. Tytussubject
PhysicsCondensed matter physicsCondensed Matter::OtherExcitonGaussianSurfaces and InterfacesElectronHartreeCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialssymbols.namesakeQuantum dotElectric fieldMaterials ChemistryCoulombsymbolsElectrical and Electronic EngineeringQuantum welldescription
The growing interest is recently focusing on QDs of type II, which contrary to type I QDs attract electrons and repulse holes (or conversely). In such QDs an electron-hole pair (Xexciton) can still be traped due to electron-hole Coulomb attraction, resulting in significantly more complex structure of excitonic states. We consider an X exciton in QD of type II defined by electrostatic focusing in a narrow quantum well, in the presence of additional external in-plane electric field. The dependence of PL spectrum on dot size and in-plane electric field is analysed within the Hartree approach for model planar Gaussian confinement. The exciton ground state and its energy red-shift are found as a function of electric field and dot size. Corresponding rearrangement of PL spectrum is described.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-06-01 | physica status solidi (a) |