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RESEARCH PRODUCT
Electronic properties of *-oriented thin films
H. AdrianMartin JourdanA. ZakharovMichael FoersterC. Herbortsubject
Materials scienceCondensed matter physicsHall effectElectrical resistivity and conductivityElectronic structureThin filmCondensed Matter PhysicsEpitaxyAnisotropyCritical fieldElectronic Optical and Magnetic MaterialsElectronic propertiesdescription
Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.
year | journal | country | edition | language |
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2007-03-01 | Journal of Magnetism and Magnetic Materials |