6533b825fe1ef96bd12827a4

RESEARCH PRODUCT

Electronic properties of *-oriented thin films

H. AdrianMartin JourdanA. ZakharovMichael FoersterC. Herbort

subject

Materials scienceCondensed matter physicsHall effectElectrical resistivity and conductivityElectronic structureThin filmCondensed Matter PhysicsEpitaxyAnisotropyCritical fieldElectronic Optical and Magnetic MaterialsElectronic properties

description

Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.

https://doi.org/10.1016/j.jmmm.2006.10.064