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RESEARCH PRODUCT
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
Jean-marie LauensteinRobert A. WellerRobert A. ReedKenneth F. GallowayAlexandre Louis BosserFrancesco PintacudaArto JavanainenAri VirtanenC.j. NicklawVeronique Ferlet-cavroisRonald D. Schrimpfsubject
Nuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)Schottky barrierschottky diodes01 natural sciencesFluenceIonpower semiconductor deviceschemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringLeakage (electronics)Diode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingNuclear Energy and EngineeringchemistryOptoelectronicsbusinession radiation effectsdescription
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-01-01 | IEEE Transactions on Nuclear Science |