6533b827fe1ef96bd1286396
RESEARCH PRODUCT
Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
Maris KniteLeonids Shebanovsubject
DiffractionMaterials scienceSiliconAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementLaserlaw.inventionCondensed Matter::Materials ScienceCarbon filmchemistryElectrical resistivity and conductivitylawX-ray crystallographyThin filmdescription
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-02-01 | Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering |