0000000000613510
AUTHOR
Leonids Shebanov
Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.
<title>Laser-pulse-induced chemical reactions and surface patterning in Co-Si and Co-Ti-Si films: investigations by x-ray diffraction and atomic force microscopy</title>
X-ray diffraction patterns reflected from the laser treated crystalline CoSi2 layer, the measurements of surface electrical resistance and atomic force microscopy micrographs confirm the 'generation-diffusion-deformational instabilities' model of formation of defect ordered structures of various types. The CO2 laser induced decrease of the thermal coefficient of resistance to zero in Co-Ti-Si films is realized. X-ray diffraction studies of the treated films confirm that the obtained (alpha) changes with number of laser pulses are caused due to solid phase reaction Co + 2Si equals CoSi2 and 5Ti + 3Si equals Ti5Si3.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Do…