6533b82afe1ef96bd128caa4

RESEARCH PRODUCT

<title>Laser-pulse-induced chemical reactions and surface patterning in Co-Si and Co-Ti-Si films: investigations by x-ray diffraction and atomic force microscopy</title>

subject

description

X-ray diffraction patterns reflected from the laser treated crystalline CoSi2 layer, the measurements of surface electrical resistance and atomic force microscopy micrographs confirm the 'generation-diffusion-deformational instabilities' model of formation of defect ordered structures of various types. The CO2 laser induced decrease of the thermal coefficient of resistance to zero in Co-Ti-Si films is realized. X-ray diffraction studies of the treated films confirm that the obtained (alpha) changes with number of laser pulses are caused due to solid phase reaction Co + 2Si equals CoSi2 and 5Ti + 3Si equals Ti5Si3.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.