6533b827fe1ef96bd12867e3

RESEARCH PRODUCT

Photoluminescence time decay of surface oxygen deficient centers in un‐doped and Ge‐doped silica

Franco Mario GelardiV. RadzigMarco CannasSimonpietro Agnello

subject

optical fiberSurface oxygenPhotoluminescenceradiation effectChemistryPhononDopingTime decayAnalytical chemistryNanosecondExcited stateradiation-induced attenuationSinglet stateAtomic physics

description

We report a study of the emission decay from the singlet excited state of two fold coordinated Si and Ge centers stabilized on the surface of silica and Ge-doped silica. The PL lifetimes are of the order of nanoseconds and increase on decreasing the temperature. The results suggest that, for the surface centers, the phonon assisted intersystem-crossing process linking the excited states affects the decay rates, is effective down to low temperatures and is distributed because of the inhomogeneity of the defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

yearjournalcountryeditionlanguage
2005-01-01physica status solidi (c)
https://doi.org/10.1002/pssc.200460244