6533b827fe1ef96bd1286db2
RESEARCH PRODUCT
Annealing of color centers in LiBaF 3
I. TaleMaris SpringisP. Kulissubject
Nuclear and High Energy PhysicsRadiationChemistryAnnealing (metallurgy)Activation energyCondensed Matter PhysicsMolecular physicsIonDelocalized electronImpurityVacancy defectGeneral Materials ScienceSpectroscopyRecombinationNuclear chemistrydescription
Results of the glow rate technique to analyze the activation energy of thermostimulated annealing of X-ray created F -type color centers in LiBaF 3 crystals are presented, showing pure and containing oxygen centers. It is shown that depending on the impurity composition two alternative mechanisms are involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F -centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine ( F i ) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F -type centers are responsible for the recombination of radiation defects above RT.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-01-01 | Radiation Effects and Defects in Solids |