0000000000034440
AUTHOR
P. Kulis
Defect Luminescence of LiBaF3 Perovskites
Blue and red luminescence of undoped LiBaF3 crystals was studied. A broad, isotropic photoluminescence band centered at 410 nm can be excited by 210 nm — 275 nm light in as grown crystals. After X-irradiation at RT a new narrower, anisotropic luminescence band appears at 425 mn which has an additional excitation band at 290 nm. The X-irradiation also creates the F- type centres and anisotropic centres with an absorption band at 630 nm and a luminescence band at 700 nm. No F- centre luminescence is observed. All the other centres mentioned act as radiative recombination centers as well. It is speculated that the origin of the blue luminescence is due to oxygen defects and that the red lumine…
Colour centres in LiBaF3 crystals
Abstract The origin of the absorption bands in LiBaF 3 created by X-ray irradiation at RT has been investigated. It is found that three absorption bands at 270, 320 and 430 nm represent different electron transitions within a radiation defect effectively created in LiBaF 3 single crystals. Following the Mollwo–Ivey relation we discuss investigations of optical dichroism, magnetic optical dichroism, as well as the assumptions regarding the accumulation kinetics of these absorption bands, the F centre being the main radiation defect created by X-rays in undoped LiBaF 3 crystals at RT.
Ion diffusion-controlled processes in fluoride crystals
Ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF 2 , BaF 2 and LiBaF 3 crystals (X-ray irradiated at 290 K) have been investigated by means of ionic conductivity and the correlated ionic thermally stimulated depolarisation current (TSDC), and radiation-induced optical absorption band thermal bleaching techniques at 290-650 K. It was found that under a DC field fluorides store large ionic space-charge. In CaF 2 , BaF 2 and LiBaF 3 , by using the ionic TSDC technique we were able to detect a series of the interstitial anion and/or anion vacancy delocalisation stages in the extrinsic ionic conductivity region. At least 4-6 wide and overlapping ionic TSD…
Luminescence of Ce‐doped borate‐oxyfluoride glass ceramics
In the present work we studied the possibility to obtain oxyfluoride glass ceramics based on a lithium and potassium borate glasses with addition of fluorides. Lithium-borate glasses without lanthanum fluoride are transparent up to 275 nm. In samples with LaF3 doped with Ce-activator, an additional absorption at about 300 nm and intense photoluminescence could be observed. Ce-doped potassium-borate glass with addition of fluorides LaF3, LiF and GdF3 was milky and not transparent, an intense photoluminescence has been observed, X-ray diffraction measurements showed a presence of well-pronounced crystalline phases of LiF as well as of GdBO3. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Growth temperature influence on the GaN nanowires grown by MOVPE technique
GaN nanowires (NWs) were successfully grown by Vapor-Liquid-Solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns. The characterization by scanning electron microscopy (SEM) reveals an optimum growth temperature at 790°C and X-ray diffraction (XRD) investigations indicates oriented crystallinity of grown NWs.
<title>Annealing of radiation defects in x-irradiated LiBaF<formula><inf><roman>3</roman></inf></formula></title>
Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the…
Trap Spectroscopy by the Glow Rate Technique using Bleaching of Colour Centres
An application of the glow rate technique (GRT) for analysis of the parameters of thermostimulated decay of colour centres is presented using the data on the decay of radiation defects in LiBaF 3 :Fe crystals created by X rays at 300 K. The GRT offers a procedure for evaluation of the mean activation energy as a function of temperature in the case of arbitrary thermostimulated relaxation kinetics represented by the trap distribution function. The experimental procedure involves at least two subsequent measurements of thermostimulated decay kinetics at different heating rates. It is shown that the decay of the F type centres is governed by interaction of mobile anion vacancies with F A and F…
Ion diffusion-controlled thermally stimulated processes in x-ray irradiated halide crystals
The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF2, BaF2, LiBaF3 and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF2, BaF2, LiBaF3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show tha…
Luminescent detectors of ionising radiation
Abstract At present in slow neutron imaging an active layer of an imaging plate IP contains a mixture of storage phosphors, usually BaFBr:Eu 2+ used for imaging of X-rays, and a neutron converter material, usually Gd 2 O 3 , LiF. A novel Li-containing luminescent material perspective for a direct neutron conversion and storage is discussed. Irradiation of LiBaF 3 crystals results in generation of Frenkel defect pairs and creation of F-type centres responsible for three absorption bands in UV-and visible spectral region. Because photo-stimulation in each of these absorption bands leads to bleaching of induced absorption, the F-type colour centres are convenient for storage of radiation dose.…
Dynamics of exciton creation and decay processes in composition – disordered InGaN thin films
In the GaN-based ternary alloys, InGaN crystals have been recognized as key materials for e-h plasmas-exciton dynamics, because of large exciton binding energies (24.8 meV in GaN). We report investigations of creating and recombination dynamics of excitons in commercially important InxGa1-xN composition range from x = 0.1 to 0.18 in which nanoscale indium composition fluctuation occurs and formation of indium rich clusters acting as quantum dots (QD) can be expected. Three MOCVD grown samples having x = 0.1; 0.14 and 0.18 have been investigated using 3D picosecond transient PL spectroscopy. It has been found that the band to band photo excitation at 15 K in whole composition range results i…
Hardening in LiF induced by fast Ni ions and recovery of properties under annealing
The recovery of hardness and optical absorbance of LiF crystals irradiated with 640 MeV nickel ions under annealing at 450–810 K is investigated. Recovery of the hardness of irradiated crystals is initiated at temperatures above 530 K, at which a transition from a complex absorption spectrum to a spectrum with only one broad peak at 275 nm is observed. Activation energy of 0.13 eV ± 0.02 eV, which is close to that necessary for migration of H centers, is obtained from the annealing data. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Annealing of color centers in LiBaF 3
Results of the glow rate technique to analyze the activation energy of thermostimulated annealing of X-ray created F -type color centers in LiBaF 3 crystals are presented, showing pure and containing oxygen centers. It is shown that depending on the impurity composition two alternative mechanisms are involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F -centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine ( F i ) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F -type centers are responsible for the recom…
host‐defect luminescence of stishovite
a detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of µs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminesc…
Radiation Defects in LiBaF3 Perovskites
We investigated the electron paramagnetic resonance (EPR), recombination afterglow, thermostimulated luminescence (TSL) and absorption of LiBaF3 perovskites crystals X-irradiated at 80 K The self-trapped hole centre VK(F2-) oriented along the [110] axis and electron F type (FA) centres are identified. X-irradiation at temperatures below 200 K results in creation of a long-term temperature-independent afterglow-tunnelling luminescence (TL), with main emission bands at 300, 370 nm and 430 nm. The short wavelength TL bands are associated with the tunnelling recombination of the F type centre with the VK centre. The thermal stability of VK centre is estimated to be about 130 K.
<title>Electronic excitations and defects in fluoroperovskite LiBaF<formula><inf><roman>3</roman></inf></formula></title>
A survey of the present situation with respect to knowledge of lattice defects, electronic excitations, such as excitons and localized excitons, as well as energy storage and transfer phenomena in LiBaF3 crystals is given. Both phenomenological models and experimental interpretations of optical absorption bands, tentatively associated with F-type (electron) centers created by X-ray or electron irradiation, is reviewed. Interpretation of three radiative processes (super-fast core-valence transitions, slow trapped exciton luminescence and luminescence of structure defects) observed in undoped LiBaF3 crystals is analyzed with respect to practical application. Attention is paid to the behavior …
Thermal relaxation of colour centres in LiBaF3crystals
Abstract Processes in LiBaF3 crystals caused by the thermal decay of F-type centres created by X-irradiation at room temperature have been examined. It is shown that the thermal decay of F-type centres results in the formation of two kinds of electron centres peaking at 630 nm and 740 nm differing in thermal stability. Weak TSL intensity, accompanying the decay of F-centres, also observed as well as the low value of the process activation energy suggest that due to the presence of moving anion vacancies a random walk of the F-centres occur. We propose that in course of the random walk of the F-centres both the aggregate F-centres are created and the annihilation with some complementary radi…
Advanced trap spectroscopy using the glow rate technique based on bleaching of color centers
Abstract The glow rate technique (GRT) is the extension of the known heating rate method to the full glow curve. The GRT like the fractional glow technique (FGT) offers a procedure for evaluation of the mean activation energy as a function of temperature in the case of arbitrary thermostimulated relaxation kinetics represented by trap distribution function. The experimental procedure involves at least two subsequent measurements of thermostimulated recombination kinetics at different heating rates. The extension of the GRT to the direct measurements of thermostimulated bleaching of the radiation-induced color centers is presented. The experimental procedure involves measurements of the deca…
Self-trapped holes and recombination luminescence in LiBaF3 crystals
Abstract We investigated electron paramagnetic resonance (EPR) angular dependencies, recombination afterglow and thermostimulated luminescence of undoped LiBaF3 crystals, X-irradiated at low temperatures. EPR parameters of the F2− molecule oriented along the [1 1 0] direction have been obtained. Based on the value of the g-shift Δg=g⊥−gII=0.02, characteristic for the VK-centres in similar perovskites, we propose that we indeed observed the VK-centres, not the H-centres. X-irradiation below 170 K results in creation of a long-time temperature-independent afterglow due to the tunnelling recombination between close electron and hole centres. The F-type electron centres and the VK as well as pr…
<title>Formation of deep acceptor centers in AlGaN alloys</title>
AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < x < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor – deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defec…
Annealing of Radiation Defects in X-Irradiated LiBaF3
AbstractResults of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type …
<title>Ion and electron trapping: release and relaxation processes in fluoride crystals</title>
The thermally stimulated relaxation (TSR) processes in CaF2, BaF2 and LiBaF3 crystals (X-ray irradiated at LNT or RT) have been investigated by means of the ionic conductivity, thermally stimulated (TS) ionic depolarization current (TSDC), TS current (TSC), TS luminescence (TSL) and thermal bleaching techniques. The ionic TSDC measurements evidence that under DC field fluorides accumulate large ionic space-charge (thermoelectric state is formed) as a result of the migrating anion interstitial and/or vacancy capture on defects. In the ionic conductivity region (290 - 650 K) the thermoelectric state anneals, and several wide and overlapping anionic TSDC peaks are detected. The ionic TSDC stag…
Colour centres in LiBaF3
Abstract The X-ray-induced optical absorption (OA) and the spectra of magnetic circular dichroism (MCD) followed by optically detected EPR (ODEPR) have been investigated in undoped LiBaF3 crystals. According to ODEPR, the absorption bands in the spectral region 470–770 nm correspond to the F-type centres, whereas the absorption band at 420 nm is assigned to the hole centres. The redistribution of electrons to the thermal more stable F-type centres indicates that all types of colour centres are annealed in the course of the thermal release of electrons from F-type centres, accompanied by a thermostimulated luminescence.
Photo- and thermostimulated processes in α-Al2O3
Abstract We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al 2 O 3 crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al 2 O 3 crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above…
The effect of substrate roughness on the static friction of CuO nanowires
Abstract The dependence of static friction on surface roughness was measured for copper oxide nanowires on silicon wafers coated with amorphous silicon. The surface roughness of the substrate was varied to different extent by the chemical etching of the substrates. For friction measurements, the nanowires (NWs) were pushed by an atomic-force microscope (AFM) tip at one end of the NW until complete displacement of the NW was achieved. The elastic bending profile of a NW during this manipulation process was used to calculate the ultimate static friction force. A strong dependence of static friction on surface roughness was demonstrated. The real contact area and interfacial shear strength wer…
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
Radiation effects in transparent ferroelectric ceramics
Radiation of different types ((gamma) -rays, electrons, neutrons) and fluence has been used to study the defect processes as well as the change of physical parameters in PLZT X/65/35 (X equals 4.5 - 11 at.%) and PbSc 0.5 Nb 0.5 O 3 (PSN) ceramics and to evaluate critical irradiation conditions. Effects on optical (extinction) spectra and dielectric characteristics (polarization, thermal and frequency dependences of dielectric permittivity (epsilon) and losses), dependent on composition and state of phase and polarization have been analyzed by means of annealing in isochronic and prolonged time regimes. A gradual shift of extinction edge to longer wavelengths, reduction of polarization and (…
Degradation features of BaF2 scintillators under radiation and magnetic fields
Degradation features of BaF2 scintillators have been examined in combined γ- and n-radiation and strong magnetic fields. Created radiation defects have been investigated by optical magnetooptical, and ODMR techniques. It is shown that the magnetic field has no selective action on defects of different structure. The magnetic field slightly diminishes the efficiency of creation of impurity color centers. The decrease of the creation rate at a magnetic field of B = 1 T does not exceed 10%. The nature of these radiation defects in BaF2 scintillators obtained by different technologies is discussed. Degradations-Eigenschaften von BaF2-Szintillatoren wurden in kombinierter γ- und Neutronen-Strahlu…
Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals
The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…
Thermostimulated recombination processes in LiBaF3 crystals
Abstract The creation of radiation defects in LiBaF 3 crystals at 10 K and the processes of their thermostimulated recombination are investigated. The methods of optical absorption, thermal bleaching of color centers, thermostimulated luminescence and fractional glow technique are used. The radiation defects anneal in a multi-stage process accompanied with thermo-luminescence at 20, 46, 105, 130, 170, 210 and 270 K . Differences in the optical absorption spectra measured before and after the TSL peaks are obtained and recombination parameters are determined. The TSL peak at 20 K arises from the delocalization of H-centers. The presence of two TSL peaks related to V K -centers at 105 and 130…