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RESEARCH PRODUCT
Growth temperature influence on the GaN nanowires grown by MOVPE technique
A VoitkansI. TaleP. KulisK. KundzinsAnatoly MishnevL. Dimitrocenkosubject
DiffractionCrystallographyCrystallinityMaterials sciencebusiness.industryScanning electron microscopeOptimum growthNanowireOptoelectronicsMetalorganic vapour phase epitaxyVapor–liquid–solid methodbusinessEpitaxydescription
GaN nanowires (NWs) were successfully grown by Vapor-Liquid-Solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns. The characterization by scanning electron microscopy (SEM) reveals an optimum growth temperature at 790°C and X-ray diffraction (XRD) investigations indicates oriented crystallinity of grown NWs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-06-23 | IOP Conference Series: Materials Science and Engineering |