0000000000255581
AUTHOR
A Voitkans
Processing of amorphous Si by pulsed laser irradiation at different wavelengths
Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2 nd and 3 rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm 2 for the 2 nd harmonics and 155 mJ/cm 2 for the 3 rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.
Reflection high energy electron diffraction as a tool in cluster deposition experiments
Reflection high energy electron diffraction (RHEED) is used to study the structure and orientation of mass-filtered iron clusters upon deposition ontoW(110). The present setup enables in situ investigations during deposition and thermal annealing. Particles as small as 2 nm at low density on the surface can be studied. The experiments reveal that larger particles with a diameter of about 13 nm are randomly oriented on the substrate with a preferred tendency to rest on their surface facets. Thermal annealing leads to a partial realignment and a significant flattening of the particles. In contrast 2 nm particles are found to align spontaneously in an epitaxial manner on W(110). Thermodynamic …
Growth temperature influence on the GaN nanowires grown by MOVPE technique
GaN nanowires (NWs) were successfully grown by Vapor-Liquid-Solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns. The characterization by scanning electron microscopy (SEM) reveals an optimum growth temperature at 790°C and X-ray diffraction (XRD) investigations indicates oriented crystallinity of grown NWs.
Dynamics of exciton creation and decay processes in composition – disordered InGaN thin films
In the GaN-based ternary alloys, InGaN crystals have been recognized as key materials for e-h plasmas-exciton dynamics, because of large exciton binding energies (24.8 meV in GaN). We report investigations of creating and recombination dynamics of excitons in commercially important InxGa1-xN composition range from x = 0.1 to 0.18 in which nanoscale indium composition fluctuation occurs and formation of indium rich clusters acting as quantum dots (QD) can be expected. Three MOCVD grown samples having x = 0.1; 0.14 and 0.18 have been investigated using 3D picosecond transient PL spectroscopy. It has been found that the band to band photo excitation at 15 K in whole composition range results i…
Size-dependent alignment of Fe nanoparticles upon deposition onto W(110)
Using in situ electron diffraction we study the orientation of mass-selected iron nanoparticles upon deposition onto single crystalline W(110) at room temperature. It is found that particles with a diameter below about 4 nm and a kinetic energy $\ensuremath{\le}0.1$ electron volt per atom spontaneously align with respect to the substrate. Larger particles preferentially rest with their (001) and (110) facets parallel to the surface, but do not show further alignment. The data may hint at thermally activated dislocation motions upon the impact on the substrate which are responsible for the observed orientation below 4 nm. By this uniformly oriented monodisperse nanostructures can be prepared…
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.