6533b855fe1ef96bd12b066a
RESEARCH PRODUCT
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
Karl-heinz Meiwes-broerL. DimitrocenkoP. KulisA VoitkansI. TaleIngo BarkeStephan Bartlingsubject
Reflection high-energy electron diffractionMaterials sciencebusiness.industryNanowireGallium nitrideChemical vapor depositionCrystallographychemistry.chemical_compoundchemistryElectron diffractionSapphireOptoelectronicsMetalorganic vapour phase epitaxybusinessWurtzite crystal structuredescription
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-06-23 | IOP Conference Series: Materials Science and Engineering |