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RESEARCH PRODUCT

Optimization of semiconductor halide perovskite layers to implement waveguide amplifiers

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Semiconductor organometallic halide (CH 3 NH 3 PbX 3 , X=Cl, Br, I) perovskites (HPVK) have been emerged as a potential gain media to construct a new generation of active photonic devices. Indeed, during the last three years a significant effort has been carried out to implement HPVK-based optical amplifiers or lasers with improved quality factors. In particular, minimization of the threshold of stimulated emission has been an important concern to decrease the power consumption, and hence to enhance the performances of the device. For this purpose strategies include a suitable integration of the semiconductor in a photonic structure, or the optimization of the material. Here we propose a novel approach to develop optical amplifiers by an appropriate passivation of HPVK layers incorporated in an optical waveguide. For this purpose, geometrical parameters were firstly properly optimized to demonstrate amplification of stimulated emission with a threshold as a low as 2 nJ. In addition, the passivation of traps of the semiconductor by introducing organic additives (twisted hexaazatrinaphthylene and bisthiadiazolefused tetraazapentacenequinone) resulted in a further reduction of the threshold (down to four fold). These results provide a novel scheme to enhance the applications of perovskite active devices.