6533b829fe1ef96bd128afcb
RESEARCH PRODUCT
DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's
Fabio PrincipatoNicola DonatoGaetano FerranteG. TuccariAlina Caddemisubject
Materials sciencebusiness.industryNoise reductionAstrophysics::Instrumentation and Methods for AstrophysicsGeneral Physics and AstronomyHigh-electron-mobility transistorNoise figureGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundGeneration–recombination noisechemistryOptoelectronicsFlicker noiseMESFETbusinessNoise (radio)description
Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-05-01 |