6533b82afe1ef96bd128b5d8
RESEARCH PRODUCT
Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiN O films as a function of the growth temperature: a percolation approach
Luc ImhoffF. FabreguetteMario MaglioneSylvie BourgeoisM.c. Marco De LucasP. SibillotM. SacilottiBruno Domenichinisubject
Materials scienceAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryChemical vapor depositionConductivityAtmospheric temperature rangeCondensed Matter PhysicsSurfaces Coatings and FilmsDielectric spectroscopychemistry.chemical_compoundchemistryElectrical resistivity and conductivityThin filmTitanium isopropoxideTitaniumdescription
Abstract Titanium oxinitride thin films have been grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) using titanium isopropoxide, Ti(OCH(CH 3 ) 2 ) 4 (TIP) and NH 3 precursors in a growth temperature range from 450 to 750°C on sapphire substrates. The electrical behaviour of these films was studied between 400 and 173 K, revealing three different behaviours, ranking from a hopping conductivity (450–500°C) to a conducting one (700–750°C), with a dual behaviour for the intermediate growth temperatures. Moreover, at room temperature, both conductimetry and impedance spectroscopy highlighted a percolation behaviour, interpreted in terms of continuum percolation. The effective media theory equations led to the usual percolation parameters ( s , t , Φ c ) and the difference between the values thus obtained and the expected ones was explained in terms of anisotropic percolation occurring in the columnar film structure.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-05-01 | Applied Surface Science |