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RESEARCH PRODUCT

Influence of disorder on anomalous Hall effect for Heusler compounds

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The anomalous Hall effect (AHE) is a long known but still not fully understood transport effect. Most theory papers focus on the influence of one particular contribution to the AHE. Actual measured experimental data, however, often are not in accord with idealized assumptions. In this work we discuss the data analysis for materials with low residual resistivity ratios. As prototypical materials we study half metallic Heusler compounds. Here the influence of defects and disorder is apparent in a material with a complex topology of the Fermi surface. Using films of different degree of disorder, we show how different scattering mechanisms can be separated. For ${\text{Co}}_{2}{\text{FeSi}}_{0.6}{\text{Al}}_{0.4}$ and ${\text{Co}}_{2}{\text{FeGa}}_{0.5}{\text{Ge}}_{0.5}$ the AHE induced by $B2$-type disorder and temperature-dependent scattering is positive, while $\text{DO}3$-type disorder and possible intrinsic contributions possess a negative sign.