6533b82afe1ef96bd128b760
RESEARCH PRODUCT
Measurements of the transport gap in semiconducting multiwalled carbon nanotubes with varying diameter and length
Sumio IijimaDavie MtsukoAkira KoshioMasako YudasakaMarkus Ahlskogsubject
Materials scienceta114ta221transport gapmultiwalled carbon nanotubesComposite materialCondensed Matter PhysicsMultiwalled carbonElectronic Optical and Magnetic Materialsdescription
Low temperature transport in multiwalled carbon nanotubes (MWNTs) has been studied at different diameters and lengths, within 2–10 nm, and 0.3–3.5μm, respectively. In a majority of the samples, semiconductivity showed up as a transport gap in the gate voltage controlled conduction, but metallic MWNTs are found in all diameters. The transport gap is seen to be quantitatively determined by a diameter dependent band gap, and length dependent localization of charge carriers. The band gap of semiconducting MWNTs is estimated to be smaller than that extrapolated from the conventional expression applicable to semiconducting single wall carbon nanotubes. The results constitute a systematical study on size dependent transport and especially of semiconductivity in MWNTs. peerReviewed
year | journal | country | edition | language |
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2015-05-20 |