0000000000019637
AUTHOR
Sumio Iijima
Measurements of the transport gap in semiconducting multiwalled carbon nanotubes with varying diameter and length
Low temperature transport in multiwalled carbon nanotubes (MWNTs) has been studied at different diameters and lengths, within 2–10 nm, and 0.3–3.5μm, respectively. In a majority of the samples, semiconductivity showed up as a transport gap in the gate voltage controlled conduction, but metallic MWNTs are found in all diameters. The transport gap is seen to be quantitatively determined by a diameter dependent band gap, and length dependent localization of charge carriers. The band gap of semiconducting MWNTs is estimated to be smaller than that extrapolated from the conventional expression applicable to semiconducting single wall carbon nanotubes. The results constitute a systematical study …
Carbon Nanotube Radio-Frequency Single-Electron Transistor
We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.